型号:

BSC072N03LD G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 30V 20A TDSON-8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
BSC072N03LD G PDF
标准包装 1
系列 OptiMOS™
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 20A
开态Rds(最大)@ Id, Vgs @ 25° C 7.2 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大) 2.2V @ 250µA
闸电荷(Qg) @ Vgs 41nC @ 10V
输入电容 (Ciss) @ Vds 3500pF @ 15V
功率 - 最大 57W
安装类型 表面贴装
封装/外壳 8-PowerVDFN
供应商设备封装 PG-TDSON-8(5.15x6.15)
包装 标准包装
其它名称 BSC072N03LD GDKR
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